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77 GHz radar notes · map of all pages

Knowledge graph

Every key circuit, parameter, test and fab or package item from the other pages as one connected graph. Pick an item to see what drives it, what it affects, which test covers it, and where each page explains it.

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Knowledge graph: how circuits, parameters and tests connect

All pages

A map of the key items on every page and how they depend on each other, like a graph view of a personal knowledge base. It has 141 items and 295 connections. Click an item to see what it connects to and why, open the section that explains it, and see the other sections that mention it. Use the type buttons to hide groups, and Focus to show only the neighbourhood of the selected item.

Drag to pan · wheel or pinch to zoom · drag an item to move it · click for details

How to read it: an arrow reads as a sentence from its start to its end, for example LNA → dominates → Noise figure. A bigger item has more connections. Each type has its own shape as well as its colour, so the groups stay clear in print and for colour-blind readers.

All items as a table
ItemTypeWhat it is
AntennaCircuitTx and Rx antennas and the chip-to-antenna transition; its loss adds straight to the noise figure and subtracts from Tx power.
PACircuitPower amplifier: drives the chirp into the Tx antenna through a transformer balun.
LNACircuitLow-noise amplifier: first gain stage of the receiver; its noise and gain set the receiver noise figure.
Mixer + TIACircuitPassive double-balanced mixer with a transimpedance amplifier: multiplies the echo by the LO to give the IF beat signal.
IF filter / HPFCircuitHigh-pass and anti-alias filters in the IF chain: suppress close-in leakage and set the IF band before the ADC.
VGA / PGACircuitProgrammable IF gain amplifier with switched feedback resistors; sets the signal level for the ADC.
ADCCircuitConverts the IF beat signal to digital; also used by BIST to measure on-chip detectors.
DFECircuitDigital front end: decimation, filtering and data formatting before the radar processing.
Radar DSP (FFT)CircuitRange and Doppler FFTs, CFAR detection and angle estimation.
Phase rotatorCircuitSets the phase of each Tx channel for beam steering and MIMO coding; built from I/Q vector summing.
Rotator DACCircuitCurrent DACs that weight the I and Q vectors of the phase rotator; their INL/DNL and bow set phase accuracy.
Power detectorCircuitDiode or square-law detector on the Tx output coupler; its DC output tells the chip the Tx power.
PFD + charge pumpCircuitPhase-frequency detector and charge pump: compare reference and divided VCO and pump current into the loop filter.
Loop filterCircuitRC network that turns charge-pump current into the VCO tuning voltage and sets loop bandwidth and stability.
VCOCircuitLC-tank voltage-controlled oscillator (about 19–20 GHz, then ×4) with switched-capacitor sub-bands.
Divider / ΣΔCircuitMulti-modulus divider driven by a sigma-delta modulator for fractional-N division.
Ramp generatorCircuitDigital chirp generator that steps the fractional divide ratio to sweep the frequency.
×4 multiplierCircuitFrequency multiplier from the VCO band to 76–81 GHz.
LO distributionCircuitBuffers and lines that carry the 77 GHz LO to every Tx rotator and Rx mixer.
LDOCircuitLow-dropout regulators that give each block a clean, local supply.
BandgapCircuitTemperature-stable voltage reference for LDOs, monitors, ADC and bias currents.
UV / OV monitorCircuitWindow comparators that flag under- and over-voltage on each supply for functional safety.
POR & sequencingCircuitPower-on reset and the order in which supplies, references and clocks come up.
ESD diodesCircuitProtection diodes on every pin; open/short test forward-biases them to check continuity.
Scan chainsCircuitFlip-flops linked into shift registers so the digital logic can be controlled and observed by the tester.
Memory BISTCircuitOn-chip March-algorithm tester for the radar data memories.
Logic BISTCircuitPseudo-random self-test of the logic, also run in the field at key-on.
JTAG / IJTAGCircuitTest access port and instrument network that reach scan, BIST and trim registers.
Test mux / ATBCircuitAnalog test muxes and the analog test bus: connect each sub-block node to the aux ADC, main ADC or a test pin.
Loopback switchesCircuitRF SP4T switches and splitter that choose which Tx feeds which Rx in the loopback.
Digital test muxesCircuitScan, clock, reset, bypass and pin-sharing muxes that test mode controls.
BIST controllerCircuitOn-chip sequencer that sets up loopback paths, runs measurements and compares results with limits.
Noise figureParameterHow much noise the receiver adds; set mostly by input loss and the LNA (Friis).
Rx gainParameterTotal receive-chain gain from antenna to ADC; high LNA gain hides later noise.
IIP3 / P1dBParameterLinearity of the receive chain; late stages (mixer, VGA) usually limit it.
Tx output powerParameterPower at the Tx ball, typically 10–14 dBm per channel.
PAEParameterPower-added efficiency of the PA; sets heat and supply current.
Phase noiseParameterNoise on the LO phase; limits detection of weak targets next to strong ones.
Chirp linearityParameterHow straight the frequency ramp is; nonlinearity smears range peaks.
Lock time / lock detectParameterHow fast the PLL settles and how the chip knows it is locked.
KVCO / tuning rangeParameterVCO gain (MHz/V) and the frequency span of each sub-band.
I/Q imbalanceParameterGain and phase mismatch between I and Q paths; creates image (ghost) targets.
ADC SNR / ENOBParameterEffective resolution of the ADC; sets the dynamic range at the digital side.
DAC INL / DNLParameterLinearity of the rotator DACs; bow (2nd-order INL) becomes phase and amplitude error.
PSRRParameterHow well a regulator or circuit rejects supply noise; poor PSRR shows up as spurs.
Dropout / load regulationParameterMinimum headroom across the LDO and its output change with load current.
VthParameterTransistor threshold voltage; shifts speed, bias points and leakage.
fT / fmaxParameterTransistor cut-off and maximum oscillation frequencies; set the headroom at 77 GHz.
gm / IdsatParameterTransconductance and saturation current: the drive strength of the transistor.
Ioff / leakageParameterOff-state transistor current; sets standby and IDDQ baseline.
Breakdown voltageParameterJunction, oxide and drain breakdown limits; cap PA swing and stress-test levels.
Sheet R / matchingParameterResistor and capacitor values and their matching; set gain steps, filter corners and trim range.
Contact resistanceParameterProbe or socket contact resistance; drifts as needles wear and falsely fails parametric tests.
Max range / SNRParameterDetection range from the radar equation: Tx power, antenna gain, NF and integration time.
Range resolutionParameterc / 2B: set by the chirp bandwidth.
CpkParameterProcess capability: distance from the mean to the nearest limit in units of 3σ.
Open / short testTestForces current into each pin through its ESD diode to find opens and shorts before any other test.
Walking-ZTestTri-states pins one at a time to find pin-to-pin shorts and leakage.
IDDQTestQuiescent supply current in several scan states; a raised value reveals bridges and gate-oxide defects.
At-speed testTestTransition and path-delay scan patterns at the functional clock to catch slow paths.
HVST / burn-inTestHigh-voltage stress and burn-in accelerate weak oxide and metal defects to failure before shipment.
VLV / VminTestVery-low-voltage test: runs logic and memory below nominal supply to expose marginal cells and resistive defects.
RF loopbackTestRoutes the Tx signal back into the Rx on-chip so the whole RF path is tested without mmWave instruments.
On-chip measurementTestDetectors, counters and the ADC measure power, frequency, gain and phase inside the chip (BISM).
Trim & calibrationTestMeasured errors are written back as trim codes: bandgap, LDO, VCO band, I/Q, phase, gain.
PCM / WATTestScribe-line test structures measured on every wafer before sort: Vth, Idsat, leakage, sheet R, breakdown.
SPCTestControl charts and run rules that keep each WAT parameter in control.
PAT / GDBNTestOutlier screens: part-average testing and good-die-in-bad-neighbourhood removal for zero-defect automotive.
AEC-Q100TestAutomotive qualification: HTOL, temperature cycling, ESD, latch-up and more.
Production test flowTestThe order of test insertions from wafer sort to final test and system test.
Fail binsTestWhere each failing die is sorted; bin data drives yield analysis.
Corners & mismatchFab & packageProcess corners (SS/FF/SF/FS) and local mismatch that designs must survive.
Wafer map signatureFab & packageSpatial patterns of failing die that point to a process tool or setting.
CMPFab & packageChemical-mechanical polishing: centre/edge rings from pad wear, slurry or pressure zones.
Reticle / lithoFab & packageExposure and reticle issues that repeat in every shot on the wafer.
Fan-out (eWLB)Fab & packageFan-out wafer-level package common for 77 GHz radar: low-loss RDL, no bond wires.
Antenna in packageFab & packageAntennas built into the package, removing the PCB RF launch.
RDLFab & packageRedistribution layers that route die pads to balls and carry the mmWave transitions.
Bump / ballFab & packageSolder bumps and balls: pitch, height and under-bump metallurgy.
Solder fatigueFab & packageThermal cycling cracks the solder joints; the leading package failure in automotive.
Temperature cyclingFab & packageCycling −40/+125 °C (or −55/+150 °C) accelerates fatigue and delamination.
Anti-alias filterCircuitLow-pass filter before the ADC that stops signals near fs from folding into the band; relaxed with a CT-ΣΔ ADC.
Decimation filterCircuitCIC and half-band FIR stages that turn the ΣΔ bit stream into 16-bit samples at 2× the IF bandwidth.
Embedded SRAMCircuit6T-cell SRAM macros for radar cube, DSP and CPU; densest structure on the die.
Memory faults / bitmapFab & packageStuck-at, coupling, retention and disturb faults; their bitmap shape points to the process cause.
Redundancy & repairTestSpare rows and columns allocated by BIRA and stored in fuses.
Soft errors / ECCFab & packageParticle-induced bit flips corrected by SEC-DED ECC and scrubbing.
Package qualificationTestAEC-Q100 stress tests of the packaged chip: preconditioning, TC, HAST/THB, autoclave, HTSL, HTOL, with read-points and pass criteria.
Cross-section / DPATestPhysical analysis after stress: CSAM, X-ray, cross-sections, SEM/EDX and shear tests.
Assembly flowFab & packageBumping, dicing, fan-out molding, RDL build-up, ball attach and singulation.
Die shift / warpageFab & packageDie movement during molding and package bending at reflow; cause RDL misalignment and open joints.
Bench bring-upTestStep-by-step first-silicon test on the evaluation board, from continuity to system test.
OTA / chamber testTestOver-the-air measurement in an anechoic chamber with reflectors and target simulators.
Radome / bumperFab & packagePlastic cover in front of the antennas; its thickness and paint set loss and reflections.
Module EOL calibrationTestAntenna gain and phase calibration and boresight alignment of the finished module.
Junction temperatureParameterDie temperature set by power and the thermal path; drives RF performance and aging.
Power delivery / PICircuitRegulators, planes and decoupling; supply noise here becomes LO spurs.
EMC testsTestCISPR 25 emissions and ISO 11452 immunity tests of the module.
EM / post-layout simulationTestElectromagnetic models and parasitic extraction that predict mmWave performance before tape-out.
Test costParameterCost per good die from tester rate, test time, sites and yield.
eFuse / OTPCircuitOne-time-programmable bits (poly eFuse, antifuse) that store trim codes, die ID and repair for life.
Shadow registersCircuitRegisters loaded from the fuses at boot; they drive the trim DACs and allow soft trim during test.
ACCSystemAdaptive cruise control: keeps a time gap to the car ahead using the front long-range radar.
AEBSystemAutomatic emergency braking for cars, pedestrians and cyclists, from time-to-collision.
BSD / LCASystemBlind-spot detection and lane-change assist from the rear corner radars.
RCTA / RCTBSystemRear cross-traffic alert and braking when reversing.
4D imaging radarSystemHigh-channel radar that also measures elevation, for L2+ and L3 driving.
Saturation detectorCircuitWindow comparators, peak detectors and ADC over-range flags that report clipping in each receive stage.
Clock jitterParameterTiming noise of the ADC clock; limits SNR at high IF frequencies.
Radar cube memoryCircuitOn-chip SRAM holding range × chirp × channel data for the Doppler and angle processing.
CFAR detectionSystemAdaptive threshold that finds targets at a constant false-alarm rate.
Angle estimationSystemDirection of arrival over the virtual array: FFT beamforming or super-resolution.
Data interfaceCircuitCSI-2, automotive Ethernet, SPI or CAN-FD link to the host.
FTTIParameterFault-tolerant time interval: detection and reaction must finish within it.
SPFM / LFM / PMHFParameterISO 26262 hardware metrics that the FMEDA must meet for the ASIL.
Key-on testsTestStart-up self-tests of logic, memories and the monitors themselves, for latent faults.
ESD power clampCircuitRC-triggered large NMOS between supply rails that carries the ESD current.
HBM / CDMTestESD qualification stresses: human-body and charged-device models.
Latch-upFab & packageParasitic thyristor turning on and shorting the supplies.
HCIFab & packageHot-carrier injection: drain-side damage that lowers gain and output power over life.
NBTI / PBTIFab & packageThreshold shift under gate bias at high temperature; slows logic and shifts analog bias.
TDDBFab & packageTime-dependent gate-oxide breakdown.
ElectromigrationFab & packageMetal atoms pushed by current density; opens and shorts in supply lines.
HTOL / FITTestHigh-temperature operating life test and the failure rate derived from it.
Mission profileSystem15-year temperature, voltage and on-time profile that sets the aging and FIT budget.
Guard band / test limitsParameterMargin between spec and test limit for measurement error, temperature and aging.
Lab–ATE correlationTestGolden units measured in the lab and on the tester to align production results.
Gage R&RTestRepeatability and reproducibility of the measurement system.
Die yield (D0)ParameterShare of good dies, set by defect density and area plus parametric margin.
DPPM / escapesParameterDefective parts per million that pass test; automotive goal below 1.
SYL / SBLTestStatistical yield and bin limits that hold abnormal lots.
Failure analysis / 8DTestRoot-cause analysis of returns and the 8D corrective-action process.
EIRP / band limitsParameterRegulatory power and band-edge limits in each market.
Radar interferenceSystemOther radars crossing the chirp; raises the noise floor or creates ghosts.
FMCW chirpSystemA linear frequency ramp; the beat frequency between Tx and echo gives range.
Beam steering / MIMOSystemTx phases steer the beam or code the channels so the receiver can separate them (virtual array).
Tx power loopSystemDetector, ADC and digital control that hold the Tx power constant over temperature and ageing.
AGCSystemAutomatic gain control: picks the VGA gain so strong echoes do not clip the ADC.
Supply treeSystemBattery or PMIC rails split into domains and local LDOs.
Functional safetySystemISO 26262 / ASIL: in-field monitors and self-tests that detect faults within the fault-tolerant time.
Digital timingSystemSetup and hold margins of the logic; corners and mismatch can break them.
All connections as a table
FromRelationTo
Antennafeeds the echo toLNA
LNAamplifies intoMixer + TIA
Mixer + TIAIF output toIF filter / HPF
IF filter / HPFfilters forVGA / PGA
VGA / PGAsets the level forADC
ADCsamples forDFE
DFEdecimates forRadar DSP (FFT)
VCOoutput is multiplied by×4 multiplier
×4 multiplierdrivesLO distribution
LO distributionLO forMixer + TIA
LO distributionLO forPhase rotator
Phase rotatordrivesPA
PAradiates throughAntenna
Rotator DACsets the phase ofPhase rotator
Phase rotatorenablesBeam steering / MIMO
PAis sampled byPower detector
Power detectorfeedsTx power loop
Tx power loopadjusts the drive ofPA
Tx power loopregulatesTx output power
Power detectoris read byADC
Ramp generatormodulatesDivider / ΣΔ
Divider / ΣΔfeeds back toPFD + charge pump
PFD + charge pumppumps charge intoLoop filter
Loop filtertunesVCO
VCOis divided byDivider / ΣΔ
FMCW chirpis generated byRamp generator
LNAdominatesNoise figure
LNAsets most ofRx gain
Mixer + TIAcontributes toIIP3 / P1dB
VGA / PGAoften limitsIIP3 / P1dB
Mixer + TIAmismatch causesI/Q imbalance
LO distributionquadrature error causesI/Q imbalance
ADCis rated byADC SNR / ENOB
Rotator DACis limited byDAC INL / DNL
PAsetsTx output power
PAis rated byPAE
VCOsets far-outPhase noise
Loop filterbandwidth sets close-inPhase noise
Loop filterbandwidth setsLock time / lock detect
Loop filterbandwidth limitsChirp linearity
VCOis characterised byKVCO / tuning range
Ramp generatordeterminesChirp linearity
LDOis rated byPSRR
LDOis rated byDropout / load regulation
Noise figurelimitsMax range / SNR
Tx output powersetsMax range / SNR
Antennaloss reducesMax range / SNR
Phase noisemasks weak targets, limitingMax range / SNR
FMCW chirpbandwidth setsRange resolution
Chirp linearitysmears peaks, degradingRange resolution
I/Q imbalancecreates ghost targets inRadar DSP (FFT)
DAC INL / DNLbecomes phase error inBeam steering / MIMO
ADC SNR / ENOBlimits dynamic range ofMax range / SNR
AGCcontrolsVGA / PGA
AGCprevents clipping inADC
IIP3 / P1dBdecides when strong echoes needAGC
IF filter / HPFremoves close-in leakage beforeAGC
fT / fmaxlimits gain and noise ofLNA
fT / fmaxlimits output power ofPA
fT / fmaxlimits tuning ofVCO
fT / fmaxsets the floor ofNoise figure
gm / Idsatwith Cgs setsfT / fmax
Vthshiftsgm / Idsat
Vthis spread byCorners & mismatch
Corners & mismatchshifts the band ofKVCO / tuning range
Corners & mismatchcan breakDigital timing
Corners & mismatchshiftsI/Q imbalance
Ioff / leakagesets the baseline ofIDDQ
Ioff / leakagerises at FF corner inCorners & mismatch
Sheet R / matchingsets gain steps ofVGA / PGA
Sheet R / matchingsets trim range ofBandgap
Sheet R / matchingsets corners ofIF filter / HPF
Sheet R / matchingmismatch limitsDAC INL / DNL
Breakdown voltagecaps the swing ofPA
Breakdown voltagesets the level ofHVST / burn-in
PCM / WATmeasuresVth
PCM / WATmeasuresIoff / leakage
PCM / WATmeasuresgm / Idsat
PCM / WATmeasuresSheet R / matching
PCM / WATmeasuresBreakdown voltage
PCM / WATis modelled forfT / fmax
PCM / WATis monitored bySPC
SPCreports capability asCpk
PCM / WATcorrelates withWafer map signature
CMPmakes rings inWafer map signature
Reticle / lithomakes repeats inWafer map signature
CMPthickness shiftsSheet R / matching
Reticle / lithoCD shiftsVth
Wafer map signaturefeedsPAT / GDBN
Production test flowstarts afterPCM / WAT
Supply treebranches intoLDO
Bandgapis the reference forLDO
Bandgapsets thresholds ofUV / OV monitor
UV / OV monitorreports faults toFunctional safety
POR & sequencingsequencesLDO
POR & sequencingwaits forBandgap
LDOsuppliesVCO
LDOsuppliesPA
LDOsuppliesLNA
PSRRsupply noise becomes spurs inPhase noise
Dropout / load regulationlimits headroom ofPA
UV / OV monitorwatchesSupply tree
BIST controllersets upRF loopback
BIST controllerrunsOn-chip measurement
RF loopbacktests the Rx path ofLNA
RF loopbacktests the Tx path ofPA
RF loopbackchecksI/Q imbalance
On-chip measurementusesPower detector
On-chip measurementmeasures withADC
On-chip measurementcounts the frequency ofVCO
On-chip measurementresult drivesTrim & calibration
Trim & calibrationcalibratesRotator DAC
Trim & calibrationcorrectsI/Q imbalance
Trim & calibrationtrimsBandgap
Trim & calibrationselects the sub-band ofVCO
On-chip measurementchecksLock time / lock detect
BIST controllerprovides in-field monitoring forFunctional safety
Logic BISTprovides in-field test forFunctional safety
Memory BISTprovides in-field test forFunctional safety
JTAG / IJTAGcontrolsBIST controller
Tx power loopis checked byOn-chip measurement
IF filter / HPFfeedsAnti-alias filter
Anti-alias filterprotectsADC
ADCstreams intoDecimation filter
Decimation filterhands samples toDFE
Clock jitterlimitsADC SNR / ENOB
Sheet R / matchingsets corners ofAnti-alias filter
Radar DSP (FFT)reads and writesRadar cube memory
Memory BISTtestsRadar cube memory
Radar DSP (FFT)runsCFAR detection
Radar DSP (FFT)runsAngle estimation
CFAR detectionsets the false-alarm rate forMax range / SNR
Angle estimationrelies on channel calibration ofBeam steering / MIMO
Radar DSP (FFT)sends the point cloud throughData interface
Functional safetymust react withinFTTI
Functional safetyis proven bySPFM / LFM / PMHF
Key-on testsfinds latent faults forSPFM / LFM / PMHF
Logic BISTruns as part ofKey-on tests
UV / OV monitoris self-tested byKey-on tests
ESD diodesdischarges throughESD power clamp
HBM / CDMstressesESD power clamp
Breakdown voltagesets the design window ofESD power clamp
HBM / CDMis part ofAEC-Q100
Latch-upis tested inAEC-Q100
ESD diodesadds capacitance to the match ofLNA
HCIlowers the power ofPA
NBTI / PBTIshiftsVCO
NBTI / PBTIslowsDigital timing
TDDBshows up inIDDQ
Electromigrationlimits current inLDO
HTOL / FITacceleratesHCI
HTOL / FITacceleratesNBTI / PBTI
Mission profilesets the stress ofHTOL / FIT
HTOL / FITis part ofAEC-Q100
Breakdown voltagesets the TDDB margin forTDDB
Guard band / test limitsprotectsDPPM / escapes
Lab–ATE correlationsets the uncertainty inGuard band / test limits
Gage R&RfeedsGuard band / test limits
Guard band / test limitsuses the spread fromCpk
On-chip measurementis aligned to the lab byLab–ATE correlation
Die yield (D0)is lost inFail bins
Wafer map signatureexplainsDie yield (D0)
PAT / GDBNreducesDPPM / escapes
SYL / SBLholds lots flagged byFail bins
Failure analysis / 8Dfeeds corrective action intoProduction test flow
DPPM / escapesis investigated byFailure analysis / 8D
EIRP / band limitscapsTx output power
Chirp linearitykeeps the chirp insideEIRP / band limits
Radar interferenceraises the noise floor forCFAR detection
Radar interferenceis detected inDFE
Ramp generatorrandomises chirps againstRadar interference
Embedded SRAMstoresRadar cube memory
Memory BISTtestsEmbedded SRAM
Memory BISTproducesMemory faults / bitmap
Vthmismatch limits Vmin ofEmbedded SRAM
Memory faults / bitmapis repaired byRedundancy & repair
Redundancy & repairstores addresses ineFuse / OTP
Wafer map signatureis overlaid withMemory faults / bitmap
VLV / Vminfinds weak cells inEmbedded SRAM
Soft errors / ECCflips bits inEmbedded SRAM
Soft errors / ECCcounts towardSPFM / LFM / PMHF
NBTI / PBTIraises Vmin ofEmbedded SRAM
Package qualificationis part ofAEC-Q100
Package qualificationincludesTemperature cycling
Package qualificationincludesHTOL / FIT
Mission profilesets the conditions ofPackage qualification
Package qualificationis inspected byCross-section / DPA
Cross-section / DPAfinds cracks inSolder fatigue
Cross-section / DPAchecksRDL
Cross-section / DPAfeedsFailure analysis / 8D
Assembly flowis qualified byPackage qualification
Assembly flowbuildsFan-out (eWLB)
Assembly flowpatternsRDL
Assembly flowformsBump / ball
Assembly flowtakes known-good dies fromProduction test flow
Die shift / warpagemisalignsRDL
Die shift / warpagecauses opens found byOpen / short test
Die shift / warpageleads toSolder fatigue
EM / post-layout simulationsets the line widths ofAssembly flow
Bench bring-upcreates reference data forLab–ATE correlation
Bench bring-upchecks firstOpen / short test
OTA / chamber testmeasuresAntenna
OTA / chamber testverifiesMax range / SNR
Radome / bumperadds loss in front ofAntenna
Module EOL calibrationcalibratesBeam steering / MIMO
Module EOL calibrationis done throughOTA / chamber test
Radome / bumperis corrected byModule EOL calibration
Junction temperaturelowersTx output power
Junction temperatureacceleratesHTOL / FIT
Junction temperatureis read byOn-chip measurement
Mission profilesets the profile ofJunction temperature
Power delivery / PIfeedsLDO
PSRRprotects the LO fromPower delivery / PI
Power delivery / PInoise causes spurs inPhase noise
EMC teststests the module forFunctional safety
EM / post-layout simulationpredictsfT / fmax
EM / post-layout simulationmodels the transition ofRDL
EM / post-layout simulationis compared withBench bring-up
Test costis cut byOn-chip measurement
Test costdepends onDie yield (D0)
Production test flowsets the insertions inTest cost
Trim & calibrationstores codes ineFuse / OTP
eFuse / OTPloads at boot intoShadow registers
Shadow registerssetsBandgap
Shadow registerssetsLDO
Electromigrationis the mechanism that programseFuse / OTP
TDDBis the mechanism of antifuseeFuse / OTP
Key-on testschecks the CRC ofeFuse / OTP
Memory BISTstores repair addresses ineFuse / OTP
HTOL / FITqualifies retention ofeFuse / OTP
ACCneeds longMax range / SNR
ACCassigns lanes withAngle estimation
AEBmust react withinFTTI
AEBneeds fineRange resolution
AEBdetects withCFAR detection
BSD / LCAneeds wide-FoVAntenna
RCTA / RCTBneeds wide-angleAngle estimation
4D imaging radarneeds many channels forBeam steering / MIMO
4D imaging radarstreams data throughData interface
Radar interferencedegradesAEB
Functional safetycoversAEB
Saturation detectorprotects pedestrian detection inAEB
Saturation detectorflags clipping inADC
Saturation detectorwatches the output ofVGA / PGA
Saturation detectortellsAGC
Saturation detectorreports a blind receiver toFunctional safety
Radar interferencetripsSaturation detector
Key-on testsself-testsSaturation detector
IIP3 / P1dBsets the level that tripsSaturation detector
BIST controllersets the selects ofTest mux / ATB
Test mux / ATBbrings nodes toADC
Test mux / ATBreadsBandgap
Test mux / ATBreadsLDO
Test mux / ATBreads the tuning voltage ofVCO
Test mux / ATBreadsPower detector
Test mux / ATBcopies the bias current ofLNA
Ioff / leakageleakage limits the accuracy ofTest mux / ATB
Test mux / ATBis locked off in the field forFunctional safety
On-chip measurementis routed byTest mux / ATB
RF loopbackis routed byLoopback switches
Loopback switchestaps the output ofPA
Digital test muxesbuildsScan chains
Digital test muxesswitches the test clocks forAt-speed test
Digital test muxesbrings outLock time / lock detect
JTAG / IJTAGsetsDigital test muxes
JTAG / IJTAGaccessesScan chains
Scan chainstests the logic forDigital timing
At-speed testusesScan chains
At-speed testcatches slow paths inDigital timing
IDDQuses scan states fromScan chains
VLV / Vminfinds marginalDigital timing
HVST / burn-inis followed byPAT / GDBN
Logic BISTreusesScan chains
HVST / burn-inaccelerates oxide defects seen byIDDQ
Open / short testforward-biasesESD diodes
Walking-ZextendsOpen / short test
Open / short testis guarded byContact resistance
Open / short testfinds opens inBump / ball
Production test flowbegins withOpen / short test
Production test flowrunsScan chains
Production test flowrunsRF loopback
Production test flowsorts dies intoFail bins
Production test flowincludesHVST / burn-in
PAT / GDBNmoves outliers intoFail bins
Contact resistanceis logged perFail bins
Fan-out (eWLB)routes throughRDL
RDLconnects toBump / ball
Bump / ballfails bySolder fatigue
Temperature cyclingacceleratesSolder fatigue
Antenna in packageintegratesAntenna
Antenna in packageis built onFan-out (eWLB)
RDLtransition loss reducesMax range / SNR
AEC-Q100includesTemperature cycling
AEC-Q100includesHVST / burn-in
Fan-out (eWLB)is qualified byAEC-Q100
The connections are curated from the other pages; the "mentioned in" lists are found automatically when the site is built, so they follow the pages as they change.
01

Glossary of abbreviations

Abbreviations are underlined with dots the first time they appear in each section. Hover to see the meaning; click to jump here. Use Search (Ctrl+K) to find an abbreviation anywhere on the page.

Radar system & ADAS

Abbr.Stands forNote
FCWForward Collision WarningWarns of an imminent frontal collision; stage before AEB.
FCTAFront Cross-Traffic AlertFront corner-radar function at junctions and driveways.
RCTBRear Cross-Traffic BrakingBrakes automatically when RCTA detects cross traffic while reversing.
DOWDoor-Opening WarningWarns before a door is opened into an approaching cyclist or car.
VRUVulnerable Road UserPedestrians, cyclists and motorcyclists.
TTCTime To CollisionRange divided by closing speed; triggers warnings and braking.
LRRLong-Range RadarFront radar, ≈ 200–300 m, narrow field of view.
MRRMid-Range Radar≈ 80–160 m, ±40–60° field of view.
SRRShort-Range RadarCorner radar, ≈ 30–80 m, ±75–90° field of view.
NCAPNew Car Assessment ProgrammeConsumer safety ratings (Euro NCAP, C-NCAP, IIHS …).
GSRGeneral Safety Regulation (EU) 2019/2144Makes AEB and other assistance functions mandatory in the EU.
CPDChild Presence DetectionIn-cabin sensing (often 60 GHz radar) that detects a child left in the car.
ACCAdaptive Cruise ControlKeeps distance to the car ahead; uses long-range front radar.
ADASAdvanced Driver-Assistance SystemsThe vehicle functions the radar serves.
AEBAutonomous Emergency BrakingBrakes automatically when a collision is imminent.
BSDBlind-Spot DetectionCorner-radar function.
LCALane-Change AssistCorner-radar function that warns of fast approaching vehicles.
RCTARear Cross-Traffic AlertRear corner-radar function when reversing.
L2SAE automation Level 2 (L3 = Level 3)Partial (L2) and conditional (L3) driving automation.
FMCWFrequency-Modulated Continuous WaveA linear chirp; range comes from the beat frequency f_b = S·2R/c.
FoVField of ViewAngular coverage in azimuth and elevation.
RCSRadar Cross SectionTarget reflectivity in dBsm (car ≈ 10, pedestrian ≈ −10…0).
dBsmDecibels relative to 1 m²Unit of RCS.
EIRPEffective Isotropic Radiated PowerTx power + antenna gain; limited by regulations.
MIMOMultiple-Input Multiple-OutputN_tx × N_rx channels form a larger virtual array.
TDMTime-Division MultiplexingOne Tx per chirp; v_max falls by a factor of N_tx.
BPMBinary Phase Modulation0/180° codes across chirps separate the Tx signals.
DDMADoppler-Division Multiple AccessEach Tx gets a slow-time phase ramp and separates in Doppler.
DoADirection of ArrivalAngle estimation over the virtual array.
DBFDigital BeamformingFFT or matched steering over array channels.
CFARConstant False Alarm RateAdaptive detection threshold (CA = cell-averaging, OS = ordered-statistic).
FFTFast Fourier TransformRange, Doppler and angle FFTs build the radar cube.
SNRSignal-to-Noise Ratio
MUSICMUltiple SIgnal ClassificationSubspace super-resolution DoA algorithm.
ESPRITEstimation of Signal Parameters via Rotational Invariance TechniquesSuper-resolution DoA algorithm.
IAAIterative Adaptive ApproachSuper-resolution spectral / DoA estimator.
DBSCANDensity-Based Spatial Clustering of Applications with NoiseGroups detections into objects.
EKFExtended Kalman FilterNonlinear tracking filter.
UKFUnscented Kalman FilterNonlinear tracking filter using sigma points.
IMMInteracting Multiple ModelTracker that mixes several motion models.
HWAHardware AcceleratorOn-chip FFT / radar processing engine.
RTSRadar Target SimulatorEcho generator for HIL and EOL testing.
HILHardware-in-the-LoopTesting the real sensor against simulated scenarios.
EOLEnd-of-LineFinal production test of a module or vehicle.

RF & analog front end

Abbr.Stands forNote
HPBWHalf-Power BeamwidthAngle between the −3 dB points of an antenna or array beam.
PDNPower Delivery NetworkRegulators, planes, decoupling and package paths that supply the chip.
PIPower IntegrityKeeping supply voltage within limits under load steps and noise.
EMIElectromagnetic InterferenceUnwanted emission or pick-up of electromagnetic energy.
BCIBulk Current InjectionImmunity test (ISO 11452-4) that injects RF current into a cable harness.
TIMThermal Interface MaterialGap pad or paste between board or package and the heat sink.
RFRadio FrequencyHere the 76–81 GHz signal.
LOLocal OscillatorThe chirp signal that drives the Tx and the Rx mixers.
IFIntermediate FrequencyThe beat / baseband signal after the mixer, DC–20 MHz.
PAPower AmplifierTx output stage, 12–14 dBm.
LNALow-Noise AmplifierFirst Rx stage; sets most of the NF.
NFNoise FigureNoise the receiver adds, in dB.
VGAVariable-Gain AmplifierProgrammable-gain stage (IF), or signed VGAs in the phase rotator.
TIATransimpedance AmplifierCurrent-to-voltage stage after a passive mixer.
HPFHigh-Pass FilterIn IF: removes leakage and DC, and equalises R⁻⁴.
LPFLow-Pass Filter
AAFAnti-Aliasing FilterLow-pass filter in front of the ADC.
PPFPolyphase FilterRC-CR network that generates I/Q.
I/QIn-phase / QuadratureTwo copies of a signal 90° apart.
IRRImage Rejection RatioHow well an I/Q path suppresses the mirror frequency.
SSBSingle SidebandA frequency shift in one direction only, e.g. the loopback offset.
BPSKBinary Phase-Shift Keying0/180° switching; produces ±f_m sidebands.
VMVector ModulatorI/Q-weighted phase rotator.
RTPSReflection-Type Phase ShifterHybrid coupler terminated by tunable loads.
P1dB1 dB compression pointInput (or output) level where gain drops by 1 dB.
IIP3Input third-order intercept pointLinearity figure; cascades with the gain before each stage.
PAEPower-Added Efficiency(P_out − P_in) / P_DC of a PA.
PsatSaturated output powerMaximum output power of a PA.
DSBDouble SidebandNoise figure counting both sidebands (typical for zero-IF mixers).
PGAProgrammable-Gain AmplifierIF VGA with digitally set gain steps.
AGCAutomatic Gain ControlLoop that sets the VGA gain from the signal level.
HD22nd-order Harmonic Distortion (HD3 = 3rd)Harmonics show up as ghost targets at 2×/3× range.
AM/PMAmplitude-to-phase conversionPhase change caused by amplitude or supply changes.
RLReturn LossMatch quality, in dB.
CplCoupler (directional coupler)Taps a small, known fraction (−15…−20 dB) of a signal for detection or loopback.
PDPower DetectorDiode or square-law RF-to-DC converter.
APCAutomatic Power ControlClosed loop from the power detector to the VGA/PA gain code.
DPDDigital PredistortionWideband PA linearisation used in comms; radar uses static gain/phase LUTs instead.
VSWRVoltage Standing-Wave RatioMismatch at the antenna/load; changes the delivered power.
CWContinuous WaveAn unmodulated single-frequency tone.
ENRExcess Noise RatioCalibrated output level of a noise source.
SiGeSilicon-Germanium (BiCMOS)Bipolar-plus-CMOS process used for earlier radar chips.
CMOSComplementary Metal-Oxide-SemiconductorRFCMOS = CMOS process with RF / mmWave capability.
RFCMOSRF-capable CMOSToday's single-chip radar process (e.g. 45/40/28/22 nm).
NMOSN-channel MOS transistor (PMOS = P-channel)
PTATProportional To Absolute TemperatureVoltage or current used by temperature sensors.
BGBandgap referenceTemperature-stable voltage reference (BG1/BG2 = two independent ones).
PVTProcess, Voltage, TemperatureVariation corners a design must cover.

LO, clock & synthesis

Abbr.Stands forNote
PLLPhase-Locked LoopLocks the VCO to the crystal and generates the ramp.
ADPLLAll-Digital PLLPLL with a TDC and a digital loop filter.
VCOVoltage-Controlled Oscillator≈ 19–20.25 GHz, multiplied ×4 to 77 GHz.
PFDPhase-Frequency DetectorCompares the divided VCO with the reference.
CPCharge Pump; also Chip ProbeIn a PLL: converts PFD pulses into loop-filter current. In test flows: wafer-level probe test.
TDCTime-to-Digital ConverterDigital phase detector of an ADPLL.
XTALCrystal (reference oscillator)40/50 MHz reference for PLL, ADC and digital.
DDSDirect Digital SynthesizerDigitally generated tone (IF test tone).
KvcoVCO gainTuning sensitivity in MHz/V; varies per band.
AFCAutomatic Frequency Calibration (band calibration)Picks the VCO capacitor-bank band before the PLL closes.
MMDMulti-Modulus DividerProgrammable divider in the PLL feedback, dithered by the ΣΔ modulator.
CMLCurrent-Mode LogicFast differential logic used for the first divider (prescaler) stages at 20 GHz.

Data conversion & digital

Abbr.Stands forNote
SNMStatic Noise MarginNoise an SRAM cell tolerates before flipping; read SNM is the critical one.
SEUSingle-Event UpsetBit flip caused by a particle strike (soft error).
SERSoft-Error RateRate of radiation-induced bit flips, in FIT per Mbit.
MBUMulti-Bit UpsetOne particle flips several neighbouring cells.
RDFRandom Dopant FluctuationRandom number of dopant atoms in a small channel; main cause of Vth mismatch.
LERLine-Edge RoughnessRough gate edges that add Vth variation in small devices.
NPSFNeighbourhood Pattern-Sensitive FaultMemory cell fails only for certain data in its neighbours.
SEC-DEDSingle-Error Correction, Double-Error DetectionECC code used on memory words (e.g. 64 + 8 bits).
ROMRead-Only MemoryMask-programmed memory for boot code and tables.
DRFData-Retention FaultMemory cell loses its value after a pause.
WLWord LineRow select line of a memory array.
BLBit LineColumn data line of a memory array (BL and its complement BLB).
OSROversampling Ratiofs / (2·BW) of a ΣΔ ADC; each doubling adds (2L+1)·3 dB of SQNR.
NTFNoise Transfer FunctionHow a ΣΔ loop shapes quantisation noise out of the signal band.
SNDRSignal-to-Noise-and-Distortion RatioENOB = (SNDR − 1.76) / 6.02.
GBWGain-Bandwidth productOp-amp figure of merit; sets filter and PGA accuracy at IF.
CMRRCommon-Mode Rejection RatioHow well a differential circuit rejects signals common to both inputs.
CSI-2MIPI Camera Serial Interface 2High-speed serial link used for raw radar data.
TSNTime-Sensitive NetworkingDeterministic automotive Ethernet (IEEE 802.1).
ADCAnalog-to-Digital ConverterMain Rx ADCs (ΣΔ) and the aux SAR ADC.
DACDigital-to-Analog ConverterRotator I/Q weights, bias, trim, test-tone generation.
SARSuccessive-Approximation Register ADCSlow, precise ADC used for monitoring.
CTContinuous-Time (CT-ΣΔ)Sigma-delta ADC with a continuous-time loop filter.
ENOBEffective Number of Bits
SFDRSpurious-Free Dynamic RangeTone relative to the largest spur.
THDTotal Harmonic Distortion
DRDynamic Range
INLIntegral NonlinearityDeviation from the ideal transfer line.
DNLDifferential NonlinearityDeviation of each step from 1 LSB.
LSBLeast Significant Bit (MSB = most significant)
DFEDigital Front EndDecimation, DC and I/Q correction, interference handling.
CICCascaded Integrator-CombMultiplier-free decimation filter.
FIRFinite Impulse Response filter
DSPDigital Signal Processor
MCUMicrocontroller Unit
CPUCentral Processing UnitE.g. the RF control CPU that runs chirps and monitors.
SoCSystem-on-Chip
ECUElectronic Control UnitVehicle computer that receives radar data.
SRAMStatic RAM (RAM = random-access memory)
ECCError-Correcting CodeMemory protection for functional safety.
DMADirect Memory Access
LUTLook-Up TableE.g. phase-code → (I, Q) DAC codes, Tx power vs. temperature.
FWFirmware (SW = software)
OTPOne-Time Programmable memoryHolds trims and IDs, like eFuse.
SPISerial Peripheral InterfaceConfiguration / test bus from host or ATE.
CANController Area Network (CAN-FD = Flexible Data-rate)Vehicle bus for object lists.
ETHEthernet (100/1000BASE-T1)Automotive single-pair Ethernet.
CSICamera Serial Interface (MIPI CSI-2)Streams raw radar data to a central SoC.
LVDSLow-Voltage Differential SignalingRaw-data debug / streaming interface.
GPIOGeneral-Purpose Input/Output
IOInput/Output

Power

Abbr.Stands forNote
LDOLow-Dropout regulatorLinear regulator; one per noise-sensitive domain.
PMICPower-Management ICExternal bucks, supervisors and watchdog.
PSRRPower-Supply Rejection RatioHow much supply ripple an LDO (or circuit) blocks.
UVUnder-Voltage (OV = Over-Voltage)Supply monitors, a safety mechanism.
OVOver-VoltageRail above its window; OV monitor protects gate oxides.
PORPower-On ResetHolds the chip in reset until all rails are valid.
BORBrown-Out ResetResets when a supply sags during operation.
ESREquivalent Series ResistanceOf the LDO output capacitor; its zero affects loop stability.
OCPOver-Current ProtectionCurrent limit on a regulator output.
IqQuiescent currentCurrent a regulator draws for itself with no load.
DLDODigital LDOSwitched pass-device array regulated by a comparator loop.
GNDGround

Test & production

Abbr.Stands forNote
EVBEvaluation BoardBoard that carries the chip on the bench with supplies, clock, interfaces and RF transitions.
SMUSource-Measure UnitPrecision instrument that forces voltage or current and measures the other.
OTAOver The AirMeasurement through antennas in a chamber instead of a cable or waveguide.
GSGGround-Signal-Ground probeRF wafer probe with a signal tip between two ground tips.
LRRMLine-Reflect-Reflect-Match calibrationOn-wafer VNA calibration method for mmWave probes.
SCPIStandard Commands for Programmable InstrumentsText command set used to automate instruments.
UPHUnits Per HourTest throughput of a tester and handler.
eFuseElectrically programmable fuseSilicided poly link blown by current; stores trim, ID and repair bits.
MTPMultiple-Time Programmable memorySmall NVM that can be rewritten a few times.
NVMNon-Volatile MemoryKeeps data without power: eFuse, OTP, MTP, flash.
VPPProgramming supply voltageSupply used only to program fuses or OTP.
CRCCyclic Redundancy CheckChecksum that detects corrupted data, e.g. trim words at boot.
RMAReturn Material AuthorizationA customer return, analysed through the 8D process.
8DEight DisciplinesStructured problem solving: team, describe, contain, root cause, correct, verify, prevent, close.
MSAMeasurement System AnalysisProves a measurement is precise and accurate enough (Gage R&R, bias, stability).
GRRGage Repeatability and Reproducibility%GRR < 10 % of tolerance is good.
BISTBuilt-In Self-TestOn-chip stimulus + measurement; result is pass/fail or a value checked against a limit.
BISMBuilt-In Self-MeasurementSame on-chip hardware, but the result is a calibrated value (dB, °, MHz) used for trim, calibration and trend.
DFTDesign for Test
ATEAutomatic Test EquipmentProduction tester.
ATPGAutomatic Test Pattern GenerationScan patterns for digital logic.
IDDQQuiescent supply-current testDetects leakage defects.
PMUParametric Measurement UnitATE DC source/measure channel.
CresContact resistanceProbe or socket contact resistance; measured with the Kelvin or two-current method.
FIMVForce Current, Measure VoltagePMU mode used for open/short (diode) tests.
FVMIForce Voltage, Measure CurrentPMU mode used for leakage and power-short tests.
IILInput leakage current, input Low (IIH = input High)Leakage limit per IO pin, typically |I| < 1 µA.
IIHInput leakage current, input High
ESDElectrostatic DischargePad protection diodes / clamps; the diode method uses them for continuity.
VDDPositive supply rail (VSS = ground / negative rail)
VSSGround / negative supply rail
DCRDC ResistanceE.g. of an RF shunt inductor, 0.5–3 Ω.
Hi-ZHigh impedance (Z)Output driver switched off; the pin floats.
OEOutput EnableControl that switches an output between driving and Hi-Z.
IOZOff-state output leakage (IOZH at VDDIO, IOZL at 0 V)Measured on a pin in Hi-Z; typically |I| < 1–10 µA.
VOHOutput High voltage threshold (VOL = Output Low)Tester comparator levels that decide 1 / Z / 0.
VOLOutput Low voltage threshold
HIGHZIEEE 1149.1 instruction that puts all outputs in Hi-Z
EXTESTIEEE 1149.1 external test instructionBoundary cells drive and sample the pins; used for interconnect and walking-Z tests.
RPCTReduced Pin-Count TestingTesting through JTAG / a few pins, so more sites fit on one tester.
BICSBuilt-In Current SensorOn-chip current monitor for IDDQ per power domain.
SPCStatistical Process Control
VNAVector Network AnalyzerLab instrument for S-parameters.
AWGArbitrary Waveform Generator
DMMDigital Multimeter
GPIBGeneral-Purpose Interface BusInstrument control bus (like LAN).

Safety, standards & regulation

Abbr.Stands forNote
PMHFProbabilistic Metric for random Hardware FailuresISO 26262 residual failure rate; < 100 FIT for ASIL B/C, < 10 FIT for D.
SEooCSafety Element out of ContextA part developed to ISO 26262 against assumed system requirements.
FMEAFailure Mode and Effects AnalysisQualitative analysis of failure modes; FMEDA adds rates and diagnostic coverage.
FITFailures In TimeFailures per 10⁹ device-hours.
MTTFMean Time To Failure
REDRadio Equipment Directive (EU 2014/53/EU)EU conformity framework for radio transmitters, including radar.
ASILAutomotive Safety Integrity LevelISO 26262 risk class A–D; radar typically ASIL-B.
ISOISO 26262 / ISO/SAE 21434 / ISO 11452Functional safety / cybersecurity / EMC immunity.
FTTIFault-Tolerant Time IntervalTime from fault to hazard; monitors must react within it.
FMEDAFailure Modes, Effects and Diagnostic Analysis
SPFMSingle-Point Fault MetricISO 26262 coverage metric.
LFMLatent Fault MetricISO 26262 coverage metric.
AECAutomotive Electronics Council (AEC-Q100 / Q200)Qualification of ICs / passives.
ETSIEuropean Telecommunications Standards InstituteEN 301 091 / EN 303 396 radar standards.
FCCFederal Communications CommissionUS rules, Part 95M for 76–81 GHz.
EMCElectromagnetic Compatibility
CISPRComité International Spécial des Perturbations RadioélectriquesCISPR 25: vehicle-component emissions.
OOBOut-of-Band (emission)

Digital DFT, stress & reliability

Abbr.Stands forNote
UHSTUnbiased Highly Accelerated Stress TestHAST without bias, 130 °C / 85 % RH; alternative to autoclave.
PTCPower Temperature CyclingTemperature cycling with the device powered on and off.
EDREndurance and Data RetentionQualification of non-volatile memory (AEC-Q100-005).
DPADestructive Physical AnalysisOpening and sectioning parts to inspect their construction and damage.
SEMScanning Electron MicroscopeHigh-magnification imaging of cross-sections and surfaces.
EDXEnergy-Dispersive X-ray spectroscopyElement analysis in the SEM: corrosion, contamination, IMC phases.
FIBFocused Ion BeamPrecise local cutting and imaging; also used for circuit edits.
LTPDLot Tolerance Percent DefectiveDefect rate a sampling plan rejects with given confidence; 0 / 231 ≈ 1 % at 90 %.
PCPreconditioningBake, moisture soak and reflow before environmental stress (JESD22-A113).
BLRBoard-Level ReliabilityReliability of the package soldered on a PCB (temperature cycling, drop, vibration).
SACTin-Silver-Copper solderLead-free solder alloy (e.g. SAC305) used for balls.
PPAPProduction Part Approval ProcessAutomotive approval package, includes the qualification report.
DRCDesign Rule CheckVerifies layout against foundry manufacturing rules.
LVSLayout Versus SchematicVerifies that the layout matches the schematic netlist.
PEXParasitic ExtractionExtracts resistance, capacitance (and inductance) of the layout for post-layout simulation.
AMSAnalog / Mixed-Signal simulationSimulation that combines transistor-level analog with digital models.
ECOEngineering Change OrderLate design fix; a metal-only ECO changes only upper masks.
SCRSilicon-Controlled RectifierThyristor; used as a compact ESD clamp, and the parasitic structure behind latch-up.
GGNMOSGrounded-Gate NMOSESD clamp that works by parasitic-bipolar snapback.
SEScan EnableSelects shift (SE = 1) or functional capture (SE = 0) in scan flops.
SAFStuck-At FaultNode permanently 0 or 1.
TDFTransition Delay FaultNode slow to rise or fall; needs at-speed test.
STAStatic Timing AnalysisFinds the longest paths for timing-aware ATPG.
OCVOn-Chip VariationTiming derates in STA that account for local (mismatch) variation across the die.
OCCOn-Chip Clock ControllerGates exact launch/capture pulses from the PLL for at-speed test.
LOCLaunch-On-CaptureAt-speed scheme; also called broadside.
LOSLaunch-On-ShiftAt-speed scheme; SE must switch at speed.
EDTEmbedded Deterministic TestScan compression (decompressor + compactor).
LFSRLinear-Feedback Shift RegisterPseudo-random sequence generator.
PRPGPseudo-Random Pattern GeneratorLFSR that feeds the scan chains in LBIST.
MISRMultiple-Input Signature RegisterCompresses responses into one signature.
STUMPSSelf-Test Using MISR and Parallel Shift-register sequence generatorStandard LBIST architecture.
LBISTLogic BISTOn-chip random-pattern scan test; used at key-on.
MBISTMemory BISTOn-chip March-algorithm test of SRAMs.
BIRABuilt-In Redundancy AnalysisComputes which spare rows/columns repair a memory.
BISRBuilt-In Self-RepairLoads the repair from eFuse at boot.
IRIR dropSupply voltage drop (current × resistance), high during scan shift.
JTAGJoint Test Action Group (IEEE 1149.1)Boundary scan and test access port.
TAPTest Access PortJTAG pins TCK, TMS, TDI, TDO, TRST.
BSDLBoundary Scan Description LanguageDescribes a chip's JTAG boundary-scan cells.
IJTAGInternal JTAG (IEEE 1687)Network for accessing on-chip instruments.
MUXMultiplexerSelects one of N inputs; in test, routes sub-block nodes to shared instruments.
ATBAnalog Test BusChip-wide wire pair (force + sense) that test muxes connect sub-block nodes to.
TGTransmission GateParallel NMOS + PMOS switch; passes the full voltage range.
SPDTSingle-Pole Double-Throw switchOne input to one of two outputs (SP4T = one of four).
BBMBreak-Before-MakeSwitching order that opens the old path before closing the new one.
ICLInstrument Connectivity Language (PDL = Procedural Description Language)IJTAG description files.
ECIDElectronic Chip IDUnique per-die ID for traceability.
HVSTHigh-Voltage Stress TestShort over-voltage on the core rail to activate latent oxide defects.
VLVVery-Low-Voltage testTest below nominal V to expose resistive defects.
VminMinimum operating voltageThe pass/fail edge in a shmoo; an outlier Vmin flags a defect.
PATPart Average Testing (AEC-Q001)Outlier limits at robust μ ± 6σ.
DPATDynamic Part Average TestingPAT limits recalculated per lot or wafer.
GDBNGood Die in Bad NeighbourhoodWafer-map screen that rejects dies in defect clusters.
NNRNearest-Neighbour ResidualCompares a die's parameter with its wafer neighbours.
DPPMDefective Parts Per MillionShipped-quality metric; automotive target ≪ 1.
FTFinal TestPackage-level production test.
SLTSystem-Level TestFunctional test by booting the application.
PCMProcess Control MonitorTest structures in the scribe lines, measured by the fab (see WAT).
WATWafer Acceptance TestFab's electrical test of PCM structures before shipping wafers.
OSATOutsourced Semiconductor Assembly and TestCompany that packages and tests the dies.
QAQuality AssuranceSample-based outgoing inspection and audits.
CpProcess capability (Cp)(USL − LSL) / 6σ: spec width vs process spread.
CpkProcess capability indexmin(USL − μ, μ − LSL) / 3σ; automotive often ≥ 1.33, critical ≥ 1.67.
USLUpper Spec Limit (LSL = Lower Spec Limit)Design limits; outside them the part is out of spec.
LSLLower Spec Limit
UCLUpper Control Limit (LCL = Lower Control Limit)Process limits from history, usually mean ± 3σ.
LCLLower Control Limit
OCAPOut-of-Control Action PlanDocumented steps when an SPC rule fires.
MRBMaterial Review BoardDecides what happens to held material: release, rework, scrap or deviation.
MIMMetal-Insulator-Metal capacitor (MOM = Metal-Oxide-Metal)Precision on-chip capacitors.
MOMMetal-Oxide-Metal (finger) capacitor
BSIMBerkeley Short-channel IGFET ModelIndustry-standard compact transistor model family used in design kits.
VtThreshold voltageGate voltage where the channel turns on; Vt_lin at low Vds, Vt_sat at VDD.
IdsatSaturation drain currentId at Vgs = Vds = VDD, per µm of width; transistor strength.
IoffOff-state leakage currentId at Vgs = 0, Vds = VDD.
DIBLDrain-Induced Barrier LoweringVt drop per volt of Vds in short-channel devices.
SSSubthreshold swing (also SS = slow-slow process corner)mV of Vgs per decade of Id below Vt; ≈ 60 mV/dec ideal at room temperature.
TTTypical-typical process cornerFF = fast-fast; FS / SF = skewed NMOS / PMOS corners.
FFFast-fast process corner
gmTransconductance∂Id/∂Vgs; the transistor's gain.
gdsOutput conductance∂Id/∂Vds; limits voltage gain (intrinsic gain = gm/gds).
CoxGate-oxide capacitance per areaεox / Tox.
ToxGate-oxide thicknessMeasured with C-V structures in WAT.
fTTransit (unity current-gain) frequency≈ gm / 2π(Cgs + Cgd).
fmaxMaximum oscillation (unity power-gain) frequencyNeeds ≈ 3–4× the operating frequency for useful gain.
VbdGate-oxide breakdown voltageVoltage where oxide current jumps past compliance in a V-ramp test.
BVBreakdown VoltageBVdss = drain-source (gate off), BVj = junction.
BVdssDrain-source breakdown voltageTransistor off-state breakdown; limits PA drain swing.
BVjJunction breakdown voltageReverse breakdown of N+/P-well or P+/N-well diodes.
TLPTransmission-Line PulseESD device characterisation with short, high-current pulses.
QBDCharge to breakdownTotal charge an oxide passes before breaking down (reliability).
IMDInter-Metal DielectricInsulator between metal lines/layers; tested with comb structures.
CMPChemical-Mechanical PlanarizationPolishing step that flattens each layer; source of centre, edge and ring signatures.
OPCOptical Proximity CorrectionMask shape corrections; weak spots (hotspots) can fail per reticle shot.
EBREdge Bead RemovalRemoves resist build-up at the wafer edge.
D0Defect densityRandom defects per unit area; baseline yield Y ≈ e^(−D0·A).
HTOLHigh-Temperature Operating Life≈ 1000 h biased at max temperature (AEC-Q100).
ELFREarly Life Failure RateShort high-temperature operation of a large sample.
TCTemperature CyclingPackage and interconnect fatigue test.
THBTemperature-Humidity-Bias85 °C / 85% RH with bias.
HASTHighly Accelerated Stress Test130 °C / 85% RH with bias.
RHRelative Humidity
HTSLHigh-Temperature Storage LifeUnbiased bake.
HBMHuman-Body Model (ESD)
CDMCharged-Device Model (ESD)
LULatch-UpJESD78 test.
EMElectromigrationMetal wear-out under current (wafer-level reliability).
TDDBTime-Dependent Dielectric BreakdownGate-oxide wear-out.
HCIHot-Carrier InjectionTransistor degradation mechanism.
NBTINegative-Bias Temperature InstabilityPMOS threshold drift.

PCB, package & materials

Abbr.Stands forNote
TCBThermo-Compression BondingFlip-chip attach with heat and force per die; fine pitch, low warpage.
MUFMolded UnderfillMold compound that also fills the gap under a flip-chip die.
CSAMC-mode Scanning Acoustic MicroscopyUltrasound imaging of voids and delamination inside packages.
AOIAutomated Optical InspectionCamera inspection of RDL, bumps and balls in the assembly line.
KGDKnown-Good DieDie that passed wafer sort and is released for assembly.
WLPWafer-Level PackagePackage built on the whole wafer (fan-in) or a reconstituted wafer (fan-out).
PCBPrinted Circuit Board
RDLRedistribution LayerThin-film Cu wiring that routes die pads to balls (fan-out) or bumps.
UBMUnder-Bump MetallisationMetal stack between die/RDL pad and the solder.
FOWLPFan-Out Wafer-Level PackageDie embedded in mold with RDL fanning out to balls; eWLB is one type.
CSPChip-Scale PackagePackage only slightly larger than the die (FC-CSP = flip-chip CSP).
AiPAntenna-in-PackageAntennas built into package layers.
IMCIntermetallic CompoundLayer formed between solder and UBM/pad; grows with time and temperature.
CTECoefficient of Thermal ExpansionMismatch between materials drives solder and bump fatigue.
MSLMoisture Sensitivity LevelJ-STD-020 rating: how long a package may sit out of dry pack before reflow.
ELKExtreme Low-k dielectricFragile back-end dielectric in advanced nodes; cracks under bump stress.
NSMDNon-Solder-Mask-Defined padPCB pad style that improves solder-joint fatigue life.
DkDielectric constantSets line impedance and antenna tuning; shifts with moisture.
DfDissipation factorDielectric loss; key for RF loss at 77 GHz.
C-SAMC-mode Scanning Acoustic MicroscopyNon-destructive imaging of delamination and voids.
PBOPolybenzoxazolePolymer dielectric used in RDL (like polyimide).
EOSElectrical OverstressDamage from overvoltage or overcurrent beyond ESD events.
BGABall Grid ArrayFC-BGA = flip-chip BGA.
eWLBembedded Wafer-Level Ball-grid-arrayFan-out package with low RF loss.
AoPAntenna-on-Package
LoPLaunch-on-PackageRF launched from package into waveguide / antenna.
GCPWGrounded Coplanar WaveguidePCB transmission line at the ball launch.
SIWSubstrate-Integrated WaveguideWaveguide formed with via fences in the PCB.
FR4Flame-Retardant epoxy-glass laminateStandard low-cost PCB material.
ENEPIGElectroless Nickel, Electroless Palladium, Immersion GoldPCB surface finish.
ImAgImmersion SilverPCB surface finish.
HASLHot-Air Solder LevelingSurface finish; too rough/uneven for 77 GHz.
PBTPolybutylene terephthalate (PC = polycarbonate)Radome plastics.
HFSSHigh-Frequency Structure Simulator (Ansys)3D EM simulator (CST = Dassault's equivalent).